The following information was submitted:
Transactions: WSEAS TRANSACTIONS ON CIRCUITS AND SYSTEMS
Transactions ID Number: 89-462
Full Name: Santos Castillo
Position: Doctor (Researcher)
Age: ON
Sex: Male
Address: Rosales y Blvd. Luis Encinas S/N, Col. Centro, Hermosillo, Sonora, C.P.83000
Country: MEXICO
Tel: 662-259-2156
Tel prefix: +52
Fax: 662-212-6649
E-mail address: semiconductores@difus.uson.mx
Other E-mails: milka@cajeme.cifus.uson.mx,elarios@polimeros.uson.mx
Title of the Paper: Formation of ZnO in or on glasses by using the Sol-Gel and Chemical Bath Deposition Techniques
Authors as they appear in the Paper: S. J. Castillo, M. C. Acosta-Enríquez, M.A. E. Zayas, H. Arizpe, T. Mendivil-Reynoso, A. Garcia-Juaréz, M. E. Alvarez-Ramos AND E. Larios-Rodriguez
Email addresses of all the authors: semiconductores@difus.uson.mx,milka@cajeme.cifus.uson.mx,elarios@polimeros.uson.mx,ealvarez@correo.fisica.uson.mx
Number of paper pages: 10
Abstract: In the first part of this work was produced Zinc Oxide (ZnO) into a glass matrix by using the Sol-Gel Technique at room temperature, these materials were prepared using tetraethyl orthosilicate (TEOS) as precursor, the Zn ions were added before the jellification step trough an aqueous solution of zinc acetate. These glasses were characterized by X-ray diffraction, optic absorption, FT-IR and Raman spectroscopy. The X-ray patterns showed amorphousness. The optical absorption shows a shoulder in the UV range corresponding whit ZnO confined to the vitreous matrix. The spectra by FT-IR show characteristic vibrations of Si-O-Si with interaction Zn+2. Raman scattering let us to identify and precise the formation of the ZnO. In the second part of this work was immersed glass substrates into an aqueous chemical bath with external controlled temperature, the chemical solutions contained in the bath were a Zn Ions source (ZnSO4) 0.1 M, a pH 10 Buffer solution (NH4Cl/NH4OH), !
Ethanolamine to complex the Zn ions, and pure water, resulting ZnO films hexagonally structured with energy band gap of 3.3 eV, growing 1000 nm during 25 minutes followed of 60 minutes to 75°C and 85°C in the same chemical reaction.
Keywords: Glasses, Zn Ions, Zinc Oxide, Sol-Gel Process, Thin Films, Chemical Bath Deposition and semiconductors
EXTENSION of the file: .doc
Special (Invited) Session: Preparation of Glasses containing Zn Ions by Sol-Gel Process
Organizer of the Session: 629-368
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