The following information was submitted:
Transactions: NUMERICAL SCHEMES AND METHODS IN SCIENCE AND ENGINEERING
Transactions ID Number: 10-159
Full Name: Milka Acosta
Position: Researcher
Age: ON
Sex: Female
Address: Blvd. Luis Encinas y Rosales S/N
Country: MEXICO
Tel: +52662292156
Tel prefix:
Fax: +526622592249
E-mail address: milka@cajeme.cifus.uson.mx
Other E-mails: semiconductores@difus.uson.mx
Title of the Paper: Design and Application of CdS Nanolayers by Chemical Bath Deposition
Authors as they appear in the Paper: M.C. Acosta-Enríquez, A. Apolinar-Iribe, M.E. Alvarez-Ramos, M.A. Quevedo-López, R. Ramírez-Bon, A. F. Jalbout, A. De Leon, A. Duarte-Moller, R.P. Duarte-Zamorano, L.E. Regalado, M.R. Manzo-Valencia and S.J. Castillo
Email addresses of all the authors: milka@cajeme.cifus.uson.mx, semiconductores@difus.uson.mx
Number of paper pages: 10
Abstract: We presented an application of nanometric layers of Cadmium Sulphide developed using Chemical Bath Deposition (CBD) technique for the growth of the CdS thin films. The thin films of CdS were synthesized employing two different complexing agent, acetilacetone and glycine. In this paper we compare the results of the thin films characterization with both complexing agent and the CdS thin film growth with glycine was selected in order to develop a Thin Film Transistor (TFT). An hexagonal polycrystalline structure concerning to the X-ray analysis results for both processes, from those studies were calculated their grain sizes by the model of Debye-Scherrer, resulting 3 nm for the acetylacetone process and 30 nm for the glycine process. Also we started with the computational analysis and preliminary results are presented.
Keywords: Cadmium Sulfide, Semiconductors, Thin Films, Acetylacetone, Glycine and Transistors
EXTENSION of the file: .doc
Special (Invited) Session: New Growth Processes for Nanometric layers of Cadmium sulphide by CBD and a Potential Application
Organizer of the Session: 629-220
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