The following information was submitted:
Transactions: WSEAS TRANSACTIONS ON CIRCUITS AND SYSTEMS
Transactions ID Number: 53-455
Full Name: Shashikala B. N.
Position: Associate Professor
Age: ON
Sex: Female
Address: Department of E&C, Siddhaganga Institute of Technology, Tumkur-572103
Country: INDIA
Tel: +919449028838
Tel prefix:
Fax:
E-mail address: shashikala.bn@rediffmail.com
Other E-mails: shashikala.bn@gmail.com
Title of the Paper: Gallium Nitride MOSFET Loss Model for BACK-TO-BACK System
Authors as they appear in the Paper: B.N. Shashikala, B.S. Nagabhushana
Email addresses of all the authors: shashikala.bn@rediffmail.com, bsnaga@gmail.com
Number of paper pages: 10
Abstract: The emergence of Gallium Nitride (GaN) based power semiconductor switches with their superior features compared with Silicon (Si) based switches has resulted in substantial improvements in the performance of power electronic converter systems. This paper presents the analytical model for switching and conduction losses associated with GaN MOSFET devices along with their dependencies on the temperature variation. Closed form governing equations are employed for the purpose of modeling of temperature dependent GaN MOSFET and diode loss models. The conduction and switching losses pertaining to varied operating conditions have been simulated and compared for GaN and Si devices. These loss models are integrated into an HVDC back-to-back system (BtB) to study the influence of GaN and Si devices on the system in terms of system efficiency.
Keywords: Gallium Nitride, MOSFET, Schottky diode, converter, modeling
EXTENSION of the file: .doc
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How Did you learn about congress: Modeling of temperature dependent GaN MOSFET and diode loss models
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