The following information was submitted:
Transactions: WSEAS TRANSACTIONS ON ELECTRONICS
Transactions ID Number: 29-439
Full Name: P Susthitha Menon
Position: Doctor (Researcher)
Age: ON
Sex: Female
Address: Photonics Technology Laboratory, Institute of Micro Engineering and Nanoelectronics, Universiti Kebangsaan Malaysia, 43600 UKM Bangi, Selangor,
Country: MALAYSIA
Tel: +6-03-89217112
Tel prefix:
Fax:
E-mail address: susi@vlsi.eng.ukm.my
Other E-mails: susthithamenon@yahoo.co.in
Title of the Paper: MQW design parameter variation in a 1.5 ìm wavelength InP-based LW-VCSEL
Authors as they appear in the Paper: K. Kumarajah, Menon, P. S., Ismail, M., Yeop, B. Y. & Shaari, S.
Email addresses of all the authors: kumarajah@ornets.com, susi@vlsi.eng.ukm.my, mahamod@vlsi.eng.ukm.my, burhan@vlsi.eng.ukm.my, sahbudin@vlsi.eng.ukm.my
Number of paper pages: 10
Abstract: Long-wavelength vertical-cavity surface-emitting lasers (LW-VCSEL) have profound advantages compared to traditional edge-emitting lasers and its commercialization is gaining momentum as the local and access network in optical communication system expands. In this paper, we present the design parameter variations of multi quantum wells (MQW) in the active region of an InP-based long-wavelength vertical-cavity surface emitting laser (LW-VCSEL) utilizing an air-post design. The MQW and barrier thickness were varied and their effect on the device threshold current, optical power, gain, lattice temperature, peak wavelength and reflectivity were analysed and presented. Quantum well thickness of 5.5 nm and barrier thickness of 8 nm gives the optimum threshold current of 0.579 mA, optical power output of 4.2 mW, modal gain of 27 cm-1, lattice temperature of 310.6 K and peak wavelength of 1.562 ìm.
Keywords: VCSEL, MQW, InGaAsP, threshold current, gain, air-post
EXTENSION of the file: .pdf
Special (Invited) Session: Multi-quantum well design parameter variation in InP-based VCSEL
Organizer of the Session: 614-439
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