The following information was submitted:
Transactions: NUMERICAL SCHEMES AND METHODS IN SCIENCE AND ENGINEERING
Transactions ID Number: 10-162
Full Name: Santos Jesus Castillo
Position: Doctor (Researcher)
Age: ON
Sex: Male
Address: Blvd. Luis Encinas y Rosales s/n
Country: MEXICO
Tel: 6622592156
Tel prefix: +52
Fax: 6622592156
E-mail address: semiconductores@difus.uson.mx
Other E-mails: milka@cajeme.cifus.uson.mx, elarios@polimeros.uson.mx
Title of the Paper: ZnO/glass substrate thin-films and ZnO:SiO2 obtained by soft-chemistry
Authors as they appear in the Paper: S. J. Castillo, M. C. Acosta-Enríquez, Ma. E. Zayas, H. Arizpe, T. Mendívil-Reynoso, A. Garcia-Juárez, M. E. Alvarez-Ramos and E. Larios-Rodríguez
Email addresses of all the authors: semiconductores@difus.uson.mx, milka@cajeme.cifus.uson.mx, elarios@polimeros.uson.mx
Number of paper pages: 10
Abstract: In the first part was produced Zinc Oxide (ZnO) into a glass matrix by using the Sol-Gel Technique at room temperature, these materials were prepared using tetraethyl orthosilicate (TEOS) as precursor, the Zn ions were added before the jellification step trough an aqueous solution of zinc acetate. The optical absorption shows a shoulder in the UV range corresponding whit ZnO confined to the vitreous matrix. The spectra by FT-IR show characteristic vi-brations of Si-O-Si with interaction Zn+2. Raman scattering let us to identify and precise the formation of the ZnO. In the second part were immersed glass substrates into an aqueous chemical bath with external controlled temperature, resulting ZnO films were hexago-nally structured with energy band gap of 3.3 eV.
Keywords: Glasses, Zn Ions, Zinc Oxide, Sol-Gel Process, Thin Films, Chemical Bath Deposition and semiconductors
EXTENSION of the file: .doc
Special (Invited) Session: Preparation of Glasses containing Zn Ions by Sol-Gel Process
Organizer of the Session: 629-368
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