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Transactions ID Number: 89-591
Full Name: Bouneb Ilhem
Position: Doctor (Researcher)
Age: ON
Sex: Female
Address: cité el GAMMAS N=°1081 CONSTANTINE
Country: ALGERIA
Tel: 0557166929
Tel prefix: /
Fax: /
E-mail address: BOUNEBILHEM@YAHOO.FR
Other E-mails: BOUNEB.ILHEM@GMAIL.COM
Title of the Paper: Modelisation of accumulation barrier of nanostructure AlGaAs/GaAs
Authors as they appear in the Paper: BOUNEB.I, MARIR –BENABBAS.M
Email addresses of all the authors: bounebilhem@yahoo.fr,bouneb.ilhem@gmail.com
Number of paper pages: 10
Abstract: This work investigates an approach for contributing to the development of a numerical model based on physical and numerical modelling of the potential at the interface of a heterostructure in AlGaAs/GaAs. We elaborate a calculus; using projective methods permit the Hamiltonian integration using Green functions in the equation of Schrödinger, for a rigorous resolution auto coherent with the equation of Poisson. A study of the convergence of globally non linear system so is effectuated and confirmed for ten essential basic functions and for a definite position of electrics walls. The validity of this rigorous physical and numerical model for heterojunction can be effectuated with a comparison of our results with the result of different models developed in the literature of the related work, from this point of view the validity of our model is confirmed.
Keywords: Heterojunction, Quantum well, Geen function, Moments methods, Poisson-Schrödinger equations,
EXTENSION of the file: .pdf
Special (Invited) Session: Modelisation of accumulation barrier of nanostructure AlGaAs/GaAs
Organizer of the Session: NAICIP-19
How Did you learn about congress: I HAVE NOT ANY NAME
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