The following information was submitted:
Transactions: WSEAS TRANSACTIONS ON CIRCUITS AND SYSTEMS
Transactions ID Number: 42-440
Full Name: Pramod Tiwari
Position: Ph.D. Candidate
Age: ON
Sex: Male
Address: Department of Electronics Engineering, Institute of Technology,Banaras Hindu University, Varanasi,(UP) INDIA
Country: INDIA
Tel: 09473517548
Tel prefix:
Fax:
E-mail address: pramod.tiwari.ece09@itbhu.ac.in
Other E-mails: pramod23amu@gmail.com
Title of the Paper: A 2D Model for Potential Distribution and Threshold Voltage of Symmetric Double-Gate (DG) MOSFETs With Vertical Gaussian Doping Profile
Authors as they appear in the Paper: PRAMOD KUMAR TIWARI*, S. DUBEY, S. MITTAL, S. KUMAR, V. SRIVASTAVA, U. PANDEY and S.J IT
Email addresses of all the authors: pramod.tiwari.ece09@itbhu.ac.in,
Number of paper pages: 11
Abstract: The paper presents a two-dimensional (2D) model for the potential distribution and threshold voltage of symmetric double- gate MOSFETs (DG MOSFETs) with a Gaussian doping profile in the vertical direction of the channel. The 2D Poisson's equation is solved with suitable boundary conditions in the channel region to obtain the channel potential of the device. The expression for the threshold voltage is obtained by calculating the total charge crossing the virtual cathode and setting its value equal to the peak channel doping. The threshold voltage dependence on the channel length, channel doping, silicon channel thickness and gate oxide thickness are also discussed. The results are well matched with the simulation results obtained by using the commercially available 2D ATLASTM device simulator.
Keywords: Poisson's equation, 2D channel potential, threshold voltage, threshold roll-off, Gaussian doping, ATLAS
EXTENSION of the file: .pdf
Special (Invited) Session:
Organizer of the Session:
How Did you learn about congress:
IP ADDRESS: 220.227.97.99
