The following information was submitted:
Transactions: WSEAS TRANSACTIONS ON ELECTRONICS
Transactions ID Number: 89-518
Full Name: Hideok Lee
Position: Professor
Age: ON
Sex: Male
Address: Department of Electronics Engineering, Chungnam National University, Gung-Dong 220, Yuseong-Gu, Daejeon 305-764
Country: KOREA
Tel: +82-42-821-7702
Tel prefix:
Fax: +82-42-823-9544
E-mail address: hdlee@cnu.ac.kr
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Title of the Paper: study on modulating schottky barrier height of ni germanide for nano-scale ge mosfets
Authors as they appear in the Paper: Yingying Zhang, Hongsik Shin, Sekyung Oh, Inshik Han, Hyukmim Kwon, Byoungseok Park, Sanguk Park, Jungdeuk Bok, Hideok Lee
Email addresses of all the authors:
Number of paper pages: 10
Abstract: In this study, we tuned the Schottky barrier height of Ni germanide by using Pt, Pd and rare earth metals such as Er, Tb, Dy, and Yb incorporation into Ni germanide for high performance nano-scale Ge MOSFETs application. The results exhibited that the electron Schottky barrier height or work function of Ni germanide was increased about 30 meV and decreased about 90 meV by Pd and Yb incorporation, respectively. Hence, the proposed Pd and Yb incorporated Ni germanide structures are promising for high performance Ge pMOSFETs and nMOSFETs, respectively, due to the lower germanide to source/drain contact resistance.
Keywords: Schottky barrier height, Ni germandie, Pd incorporation, Yb incorporation, high performance, Ge MOSFETs
EXTENSION of the file: .doc
Special (Invited) Session: Tuning Schottky Barrier Height of Ni Germanide for High Performance Nano-scale Ge MOSFETs Application
Organizer of the Session: 640-096
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