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Transactions: WSEAS TRANSACTIONS ON ELECTRONICS
Transactions ID Number: 31-269
Full Name: Petr Betak
Position: Ph.D. Candidate
Age: ON
Sex: Male
Address: Brno, Udolni 53
Country: CZECH REPUBLIC
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E-mail address: petr.betak@phd.feec.vutbr.cz
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Title of the Paper: Variable Lateral Silicon Controlled Rectifier
Authors as they appear in the Paper: Petr Betak, Vladislav Musil
Email addresses of all the authors: petr.betak@phd.feec.vutbr.cz, musil@feec.vutbr.cz
Number of paper pages: 10
Abstract: The Variable lateral Silicon Controlled Rectifier (VLSCR) is a SCR based structure with the possibility to tune I-V snapback characteristics. This effect is important for an ESD (electrostatic discharge) protection design. The ESD protection structures act as a protection of integrated circuits against parasitic electrostatic discharge. Among often used structures belong structures having snapback type of I-V characteristic. Typical is a gate-grounded NMOS transistor [3] or a SCR [3]. This text is dealing with the VLSCR structure which enables I-V snapback characteristics tuning according to the application demand. Simulated technology was 0.5µm CMOS very high voltage (VHV Integrated Circuits). Measurement was done in 1.5 µm BiCMOS process.
Keywords: ESD, SCR, LVTSCR, VLSCR
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