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Transactions: WSEAS TRANSACTIONS ON CIRCUITS AND SYSTEMS
Transactions ID Number: 31-525
Full Name: Iman Farghadan
Position: Researcher
Age: ON
Sex: Male
Address: 6th Floor-No 176- Arshi Street- Golestan Street- Narmak- Tehran- Iran
Country: IRAN
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E-mail address: i.farghadan@gmail.com
Other E-mails: i.farghadan@ee.kntu.ac.ir
Title of the Paper: Modeling of Nonlinear Active Circuits Using FDTD Approach
Authors as they appear in the Paper: Iman Farghadan, Ahmad Fayaz, Nima Darabi, Peter Svensson
Email addresses of all the authors: i.farghadan@gmail.com,fayaz_ahmad@mail.com,darabi@q2s.ntnu.no,svensson@iet.ntnu.no
Number of paper pages: 10
Abstract: This paper, describes a voltage- source formulation of the extended finite-difference time-domain algorithm for the purpose of modeling nonlinear microwave devices. Based on this approach, the device-wave interaction is characterized and incorporated into FDTD algorithm. Analysis of nonlinear properties, including harmonic generation and intermodulation, can be accomplished by using a large signal device circuit model. This technique is applied to the analysis of a typical nonlinear microwave amplifier, which includes a threeterminal active MESFET device. Simulation results are in good agreement with MICROWAVE OFFICE results.
Keywords: Fdtd, Mesfet, Large Signal, Microwave Amplifier, Intermodulation
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