The following information was submitted:
Transactions: INTERNATIONAL JOURNAL of CIRCUITS, SYSTEMS and SIGNAL PROCESSING
Transactions ID Number: 20-605
Full Name: Lee Khuan
Position: Associate Professor
Age: ON
Sex: Female
Address: Faculty of Electrical Engineering, UiTM, 40450 Shah Alam.
Country: MALAYSIA
Tel:
Tel prefix:
Fax:
E-mail address: leeyootkhuan@salam.uitm.edu.my
Other E-mails:
Title of the Paper: determination of flat band and drain voltage for maximum sensitivity and linearity of Electrolyte Insulator Interface
Authors as they appear in the Paper: Roziah Jarmin, Lee Y Khuan, Hadzli Hashim, Anuar Ahmad,Mohd Mazzuan
Email addresses of all the authors: leeyootkhuan@salam.uitm.edu.my,roziah353@salam.uitm.edu.my,dranuar@unisel.edu.my
Number of paper pages: 8
Abstract: Integration of ISFET sensor with signal processing circuits has made it easier, thus enabling simpler and portable application, even potential on-site screening is possible with the recent advances of electrochemical sensors and silicon technology. ISFET sensor fabricated with CMOS technology benefits from low cost production, low power and miniaturization enabling for micro system. ISFET sensor is fundamentally a MOSFET with a gate structure comprising of a reference electrode and insulator. The ion concentration of electrolyte which completes the gate-source circuit, affects the gate potential to produce threshold voltage. It serves at the front end of the instrumentation system, with a critical role to interface between the electronic signals and measured signals. OrCAD PSpice facilitates the design and testing of circuitry before the costly fabrication, with a drag-n-drop sub-circuit block library of macro models. However, even with its current popularity, mac!
ro model for ISFET devices is not found. The paper proposes a macro modeling approach for the physical-chemical behavioral model of ISFET, to contribute to a new sub-circuit block for PSpice, to allow characterization and parameterization of such devices to be simulated. Its functional quality is ascertained by comparing its drain current characteristic against that generated from source code from previous work, with ±8% discrepancy in sensitivity for pH [4 7 10]. Then, it is used to design parameters for a Si3N4 FET sensitive to H+ ion, for operation characteristic to be as linear and sensitive as possible. The drain and flat band voltage optimal for this requirement are found to be 0.1volt and 1.5volt respectively. In the case of drain voltage, it is found that smaller voltage produces faster and more sensitive response. Higher drain current and lower cut-off voltage yields higher sensitivity. At the optimal drain voltage of 0.1volt, a sensitivity of 54.79mV/pH is reporte!
d. In the case of Vbias, Vbias of 1.5volt is preferred to 1.0volt for
linear change in drain current to pH value.
Keywords: ISFET, H+ Ion, pH, PSpice, OrCAD, Macro-model.
EXTENSION of the file: .doc
Special (Invited) Session: Parameter Selection for an Electrolyte Insulator Interface based Si3N4 Field Effect Transistor Sensitive to H+ Ion Concentration with PSpice Macro Modeling
Organizer of the Session: 650-573
How Did you learn about congress:
IP ADDRESS: 202.58.85.15
