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Transactions: WSEAS TRANSACTIONS ON CIRCUITS AND SYSTEMS
Transactions ID Number: 53-313
Full Name: Rawid Banchuin
Position: Lecturer
Age: ON
Sex: Male
Address: 235 Petchakasem Rd., Phasi-charoen, Bangkok 10163
Country: THAILAND
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E-mail address: rawid_b@yahoo.com
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Title of the Paper: A Novel Complete High Precision Standard Linear Element-Based Equivalent Circuit Model of CMOS Gyrator-C Active Transformer
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Number of paper pages: 15
Abstract: In this research, the novel equivalent circuit model of the CMOS gyrator-C active transformer has been proposed. Besides the effect of the unwanted intrinsic elements, the effect of the finite open loop bandwidth, which was neglected in previous research, is also taken into account. By this reason, it is a complete model. The proposed model is constructed based upon the simple standard linear elements and can accurately simulate the characteristics of the CMOS gyrator-C active transformer for various decades of frequency which cover the operating range of the on-chip monolithic transformer given by a few GHz up to 10 GHz. The percentage of deviations between each of the parameters obtained from the equivalent circuit model and a similar one obtained from the original active transformer were found to be very small, for example, the deviation between the Re[z11], Im[z11] and Re[z21] of the model and the topology II active transformer have been found to be lower than !
0.007%, 0.2703% and 0.0139% respectively. The average computational times for the simulations are significantly reduced by using this model. Hence, the proposed model has been found to be a convenient tool for both manual and computer based analysis/design of various applications involving the CMOS gyrator-C active transformer. Furthermore, a simple procedure to minimize the effects of both major nonidealities is also discussed.
Keywords: On-chip monolithic transformer, CMOS gyrator-C active transformer, Equivalent circuit model, Standard linear element, High order element
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